Analysis and Design of a 60 GHz Fully-Differential Frequency Doubler in 130 nm SiGe BiCMOS
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8334884/8350884/08351193.pdf?arnumber=8351193
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-08
2. A 117.5–155-GHz SiGe ×12 Frequency Multiplier Chain With Push-Push Doublers and a Gilbert Cell-Based Tripler;IEEE Journal of Solid-State Circuits;2023-09
3. 8.0-pJ/bit BPSK Transmitter With LO Phase Steering and 52-Gbps Data Rate Operating at 246 GHz;IEEE Transactions on Microwave Theory and Techniques;2023-07
4. A 60 GHz Frequency Doubler with 3.4-dBm Output Power and 4.4% DC-to-RF-Efficiency in 130-nm SiGe BiCMOS;2021 16th European Microwave Integrated Circuits Conference (EuMIC);2022-04-03
5. Ultra-Wideband Frequency Doubler with Differential Outputs in SiGe BiCMOS;2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2022-01-16
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