Analytical model for p-channel MOSFETs-Reference-Cited by-同舟云学术

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Analytical model for p-channel MOSFETs

Published:1991 Issue:12 Volume:38 Page:2632-2646
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Moon B.,Park C.,Rho K.,Lee K.,Shur M.,Fjeldly T.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/4086/00158685.pdf?arnumber=158685

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Improved resolution method to study at 3D the conduction phenomena inside GaAs PIN photodiode;Microelectronics Reliability;2010-03

3. Modeling MOSFET surface capacitance behavior under non-equilibrium;Solid-State Electronics;2005-06

4. A physics-based short-channel current–voltage model for buried-channel MOSFETs;Solid-State Electronics;1999-07

5. A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors;Japanese Journal of Applied Physics;1998-05-15

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