Improved resolution method to study at 3D the conduction phenomena inside GaAs PIN photodiode-Reference-Cited by-同舟云学术

Improved resolution method to study at 3D the conduction phenomena inside GaAs PIN photodiode

Published:2010-03 Issue:3 Volume:50 Page:447-453
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Bouabdallah B.,Bourezig Y.,Benichou B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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3. Moonjung Kim, Jung-Ho Cha, Seong-Ho Shin, Soo-Kun Jeon, Jaeho Kim, Young-Se Kwon. A monolithically integrated InP-based HBT and p–i–n photodiode using new stack-shared layer scheme. In: 11th GaAs symposium – Munich; 2003. p. 227–30.

4. Verneuil JL. Simulation de systèmes de télécommunication par fibre optique à 40Gbits/s. Doctorat thesis. Université de Limoges; 2003.

5. Photodiode à avalanche GaAs/GaAlAs à superréseau à λ=0.8μm; bruit et facteur d’excès de bruit;Orsal;J Phys III,1991

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