1/f noise in hot-carrier damaged MOSFET's: effects of oxide charge and interface traps-Reference-Cited by-同舟云学术

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1/f noise in hot-carrier damaged MOSFET's: effects of oxide charge and interface traps

Published:1993-05 Issue:5 Volume:14 Page:256-258
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tsai M.-H.,Ma T.-P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/5621/00215185.pdf?arnumber=215185

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-Dependent Hot Carrier Degradation in Polysilicon Emitter Bipolar Transistors Under High Current and Radiation Combined Stress;IEEE Transactions on Electron Devices;2021-09

2. Low-Frequency Noise Analysis of the Optimized Post High-k Deposition Annealing in FinFET Technology;IEEE Transactions on Electron Devices;2021-03

3. Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress;IEEE Journal of the Electron Devices Society;2021

4. Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress;IEEE Transactions on Electron Devices;2012-11

5. External Stresses on Tensile and Compressive Contact Etching Stop Layer SOI MOSFETs;IEEE Transactions on Electron Devices;2010-08

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