Performance Analysis of GaAs DG-JLMOSFET: Impact of Gate Oxide and Its Thickness-Reference-Cited by-同舟云学术

Performance Analysis of GaAs DG-JLMOSFET: Impact of Gate Oxide and Its Thickness

Published:2022-07-01 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Region 10 Symposium (TENSYMP)
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Author:

Choudhury Parag¹,Bhuiyan Reaz Uddin¹,Hasan Md. Soyaeb¹,Sultana Sunjida¹,Minim Nawara Tanzee¹,Ahmed Nafisa¹,Hasan Md Tanvir²,Islam Md Rafiqul³

Affiliation:

1. Military Institute of Science and Technology (MIST),Department of EECE,Dhaka,Bangladesh,1216

2. Jashore University of Science and Technology (JUST),Department of EEE,Jashore,Bangladesh,7408

3. Khulna University of Engineering and Technology (KUET),Department of EEE,Khulna,Bangladesh,9203

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9864330/9864331/09864435.pdf?arnumber=9864435

Reference20 articles.

1. Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation

2. Junctionless in-plane-gate transparent thin-film transistors

3. Impact of high mobility III‐V compound material of a short channel thin‐film SiGe double gate junctionless MOSFET as a source

4. Effect of high‐ k dielectric on the performance of Si, InAs and CNT FET

5. Effect of dielectric constant and oxide thickness on the performance analysis of symmetric double gate stackoxide junctionless field effect transistor in subthreshold region;saha;International Conference on Electrical Computer and Communication Engineering (ECCE),0

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1. Performance Enhancement of Cylindrical Surrounding Gate JL-MOSFET with HfO₂ Spacer;2023 26th International Conference on Computer and Information Technology (ICCIT);2023-12-13

2. Effect of Recessed Gate Metal on Performance Analysis of GaAs Based DG-JLMOSFET;2023 International Conference on Electrical, Computer and Communication Engineering (ECCE);2023-02-23

3. Impact of Channel Length Scaling on the Performance of Recessed GaAs Channel DGJLFET;2023 International Conference on Intelligent and Innovative Technologies in Computing, Electrical and Electronics (IITCEE);2023-01-27

4. Effect of Extended Back Gate in GaAs Based DG- JLMOSFET;2022 25th International Conference on Computer and Information Technology (ICCIT);2022-12-17