Electrografted seed layers for metallization of deep TSV structures-Reference-Cited by-同舟云学术

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Electrografted seed layers for metallization of deep TSV structures

Published:2009-05 Issue: Volume: Page:
ISSN:
Container-title:2009 59th Electronic Components and Technology Conference
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Author:

Raynal F.,Zahraoui S.,Frederich N.,Gonzalez J.,Couturier B.,Truzzi C.,Lerner S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5066986/5073977/05074156.pdf?arnumber=5074156

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Parasitic effect analysis on TSV design factors;2022 IEEE 24th Electronics Packaging Technology Conference (EPTC);2022-12-07

2. A TSV-Last Approach for 3D-IC Integration and Packaging using WNi Platable Barrier Layer;2021 IEEE 71st Electronic Components and Technology Conference (ECTC);2021-06

3. Impact of Electroless-Ni Seed Layer on Cu-Bottom-up Electroplating in High Aspect Ratio (>10) TSVs for 3D-IC Packaging Applications;2020 IEEE 70th Electronic Components and Technology Conference (ECTC);2020-06

4. Study of Annular Copper-Filled TSVs of Sensor and Interposer Chips for 3-D Integration;IEEE Transactions on Components, Packaging and Manufacturing Technology;2019-03

5. 3-D Integration and Through-Silicon Vias in MEMS and Microsensors;Journal of Microelectromechanical Systems;2015-10

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