Buried Power Rail Metal exploration towards the 1 nm Node
Author:
Affiliation:
1. imec vzw,Leuven,Belgium,B-3001
2. ASM Belgium NV,Leuven,Belgium,B-3001
3. ASM Microchemistry Oy,Helsinki,Finland
4. ASM America Inc, 3440 East University Drive,Phoenix,AZ,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720684.pdf?arnumber=9720684
Reference8 articles.
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes;Nature Nanotechnology;2024-06-21
2. Improved RF Performance with Buried Power Rail and Contact over Active Gate in Nanosheet FETs;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19
3. Electrical behavior of ALD-molybdenum films in the thin-film limit;2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS);2024-04-15
4. Fermi-level depinning in Mo/Si junctions by insertion of amorphous Si-rich Mo silicide film formed via gas-phase reactions of MoF6 with SiH4;Japanese Journal of Applied Physics;2024-01-04
5. Insight Into Electromigration Reliability of Buried Power Rail With Alternative Metal Material;IEEE Transactions on Electron Devices;2024-01
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