Al-doped and Deposition Temperature-engineered HfO2 Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68)
Author:
Affiliation:
1. National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720632.pdf?arnumber=9720632
Reference36 articles.
1. Stress induced defect generation implications of doping HfO2 with Al
2. Development of a novel, low-viscosity UV-curable polymer system for UV-nanoimprint lithography
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