3D Sequential Process Integration for CMOS Image Sensor-Reference-Cited by-同舟云学术

3D Sequential Process Integration for CMOS Image Sensor

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Nakazawa K.¹,Yamamoto J.¹,Mori S.¹,Okamoto S.¹,Shimizu A.¹,Baba K.¹,Fujii N.¹,Uehara M.¹,Hiramatsu K.¹,Kumano H.¹,Matsumoto A.¹,Zaitsu K.¹,Ohnuma H.¹,Tatani K.¹,Hirano T.¹,Iwamoto H.¹

Affiliation:

1. SONY Semiconductor Solutions Corporation,Kanagawa,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720563.pdf?arnumber=9720563

Reference6 articles.

1. Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrate

2. Discrete Dopant Effects on Statistical Variation of Random Telegraph Signal Magnitude

3. 3D Sequential Low Temperature Top Tier Devices using Dopant Activation with Excimer Laser Anneal and Strained Silicon as Performance Boosters

4. Advances, challenges and opportunities in 3D CMOS sequential integration

5. Low frequency noise impact on CMOS image sensors;martin-gonthier;24th Conference on Design of Circuits - DCIS'09,0

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