14nm FinFET process technology platform for over 100M pixel density and ultra low power 3D Stack CMOS Image Sensor-Reference-Cited by-同舟云学术

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14nm FinFET process technology platform for over 100M pixel density and ultra low power 3D Stack CMOS Image Sensor

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Yu Donghee,Choi Jong-Won,Jung Sangil,Kwon Minho,Ha Il-Seon,Kim Chaesung,Cho Sanghyun,Lim Seunghyun,Kim Won-Woong,Kim Moo-Young,Park Seonghye,Lee Choong jae,Lee Ki-Don,Ranjan Rakesh,Maeda Shigenobu,Jeong Gitae,Park Myounkyu,Park Junghwan,Hwang Seungju,Lee Joonhyung,Yu Sunghun,Shin Hyunjung,Kim ByoungHo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993567.pdf?arnumber=8993567

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation;2022 International Conference on Electronics, Information, and Communication (ICEIC);2022-02-06

2. Advancement of Chip Stacking Architectures and Interconnect Technologies for Image Sensors;Journal of Electronic Packaging;2021-09-24

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