Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators-Reference-Cited by-同舟云学术

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Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Hsieh Ping-Yi,Huang Chien-Chi,Tai Ming-Chi,Lo Wei-Chung,Shen Chang-Hong,Shieh Jia-Min,Chang Da-Chiang,Chen Kuan-Neng,Yeh Wen-Kuan,Hu Chenming,Chang Yi-Jui,Chen Pin-Jun,Chen Chun-Liang,Yang Chih-Chao,Huang Po-Tsang,Chen Yi-Jing,Shen Chih-Ming,Liu Yu-Wei

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993441.pdf?arnumber=8993441

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2. Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs;Japanese Journal of Applied Physics;2024-04-01

3. Preparation of Large Grain Size Polysilicon Using Long-Pulse Green Laser Annealing for 3-D Integration Technology;IEEE Transactions on Electron Devices;2024-03

4. New structure transistors for advanced technology node CMOS ICs;National Science Review;2024-01-05

5. Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration;IEEE Transactions on Electron Devices;2024-01

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