Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current-Reference-Cited by-同舟云学术

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Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Smets Quentin,Groven Benjamin,Caymax Matty,Radu Iuliana,Arutchelvan Goutham,Jussot Julien,Verreck Devin,Asselberghs Inge,Mehta Ankit Nalin,Gaur Abhinav,Lin Dennis,Kazzi Salim El

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993650.pdf?arnumber=8993650

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