Short Time High-Resistance State Instability of TaOx-Based RRAM Devices-Reference-Cited by-同舟云学术

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Short Time High-Resistance State Instability of TaOx-Based RRAM Devices

Published:2017-01 Issue:1 Volume:38 Page:32-35
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Xinyi,Wu Huaqiang^ORCID,Gao Bin,Deng Ning,Qian He

Funder

National Hi-Tech Research and Development Project of China

China Key Research and Development Program

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7802592/07747537.pdf?arnumber=7747537

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-rectifying NiOX/WOX heterojunction synaptic memristor for crossbar architectured reservoir computing system;Journal of Alloys and Compounds;2024-10

2. High-speed and low-power embedded TEC BCH scheme for ReRAM array;IEICE Electronics Express;2023-08-10

3. Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process;IEEE Transactions on Electron Devices;2023-03

4. Fast and Accurate Weight Updating Strategy for Resistive Random-Access Memory (RRAM)-Based Neural Networks;IEEE Electron Device Letters;2023-03

5. Understanding the Origin of Unreliable Low-Resistance State During Initialization Process;IEEE Transactions on Electron Devices;2022-11

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