High-Performance Ultraviolet 385-nm GaN-Based LEDs With Embedded Nanoscale Air Voids Produced Through Atomic Layer Deposition and Al2O3Passivation-Reference-Cited by-同舟云学术

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High-Performance Ultraviolet 385-nm GaN-Based LEDs With Embedded Nanoscale Air Voids Produced Through Atomic Layer Deposition and Al2O3Passivation

Published:2016-04 Issue:4 Volume:37 Page:452-455
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liu Che-Yu,Huang Chia-Yen,Wu Pei-Yu,Huang Jhih-Kai,Kao Tsung Sheng,Zhou An-Je,Lin Da-Wei,Wu YewChung Sermon,Chang Chun-Yen,Kuo Hao-Chung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7438958/7419236.pdf?arnumber=7419236

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Performance of InGaN Light-Emitting Diodes via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates;ACS Photonics;2023-09-11

2. Luminescence efficiency improvement of small-size micro light-emitting diodes by a digital etching technology;Optics Letters;2022-12-01

3. Fabrication and Characterization of Plasmonic Au Nanoparticles on ITO-Coated Glass Sheets;Plasmonics;2022-08-25

4. Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement;Frontiers in Materials;2022-02-28

5. Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices;Surfaces and Interfaces;2020-12

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