Tunnel Field-Effect Transistor With an L-Shaped Gate-Reference-Cited by-同舟云学术

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Tunnel Field-Effect Transistor With an L-Shaped Gate

Published:2016-07 Issue:7 Volume:37 Page:839-842
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang Zhaonian^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7499894/07482645.pdf?arnumber=7482645

Cited by 169 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ambipolar current suppression in drain elevated TFET using a novel extended drain structure with a moderate doping profile;Microelectronics Journal;2024-09

2. A novel gate over source-channel overlap dual-gate TFET with insulator pocket and lateral source contact for optimizing subthreshold characteristic;Microelectronics Journal;2024-09

3. Design and application of germanium based complementary TFET devices with step tunneling paths;Microelectronics Journal;2024-08

4. Ultra Low Power and High Speed Electronic Circuits Using Double Gate Tunnel Field Effect Transistor;Journal of The Institution of Engineers (India): Series B;2024-08-01

5. Investigation of Reliability Issues in a hybrid Extended Dual Source Double Gate Tunnel FET;IETE Journal of Research;2024-07-11

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