Multiband strain balanced superlattice material system for third generation infrared detectors
Author:
Affiliation:
1. Robert R. McCormick School of Engineering and Applied Science, Northwestern University,Department of Electrical and Computer Engineering,Evanston,IL,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10646627/10646628/10647036.pdf?arnumber=10647036
Reference7 articles.
1. Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers
2. Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor
3. Type-II superlattice-based extended short-wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch-stop layer to allow near-visible light detection
4. Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
5. Recent advances in InAs/InAs1-xSbx/A1As1-xSbx gap-engineered type-II superlattice-based photodetectors;Razeghi;Proc. SPIE 10177, Infrared Technology and Applications XLIII,2017
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