Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-03238-2.pdf
Reference19 articles.
1. Huang, E. K.-w. et al. Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance. Opt. Lett. 36, 2560–2562, doi: 10.1364/ol.36.002560 (2011).
2. Huang, E. K.-w. et al. Highly selective two-color mid-wave and long-wave infrared detector hybrid based on Type-II superlattices. Opt. Lett. 37, 092109, doi: 10.1364/ol.37.004744 (2012).
3. Kwei-wei Huang, E., Haddadi, A., Chen, G., Hoang, A.-M. & Razeghi, M. Active and passive infrared imager based on short-wave and mid-wave type-II superlattice dual-band detectors. Opt. Lett. 38, 22–24, doi: 10.1364/ol.38.000022 (2013).
4. Hoang, A. M., Chen, G., Haddadi, A. & Razeghi, M. Demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices. Applied Physics Letters 102, 011108, doi: 10.1063/1.4773593 (2013).
5. Nguyen, B.-M. et al. Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12μm. Applied Physics Letters 90, 231108, doi: 10.1063/1.2746943 (2007).
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