Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures-Reference-Cited by-同舟云学术

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Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures

Published:1995 Issue:2 Volume:42 Page:215-218
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Belenky G.L.,Kazarinov R.F.,Lopata J.,Luryi S.,Tanbun-Elk T.,Garbinski P.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/16/8484/00370077.pdf?arnumber=370077

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission;Applied Physics Letters;2014-10-06

2. Ultrabroad stimulated emission from quantum well laser;Applied Physics Letters;2014-06-23

3. Electrical Scanning Probe Microscopy: Investigating the Inner Workings of Electronic and Optoelectronic Devices;Critical Reviews in Solid State and Materials Sciences;2005-04

4. Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures;Electronics Letters;2005

5. A theoretical investigation of the characteristic temperature T/sub 0/ for semiconductor lasers;IEEE Journal of Selected Topics in Quantum Electronics;2003-05

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