Low-Frequency Noise Characteristics of GaN Schottky Barrier Photodetectors Prepared With Nickel Annealing-Reference-Cited by-同舟云学术

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Low-Frequency Noise Characteristics of GaN Schottky Barrier Photodetectors Prepared With Nickel Annealing

Published:2012-09 Issue:9 Volume:12 Page:2824-2829
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Chen Tse-Pu,Young Sheng-Joue,Chang Shoou-Jinn,Huang Bohr-Ran,Wang Shih-Ming,Hsiao Chih-Hung,Wu San-Lein,Yang Chun-Bo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/7361/6248229/06204027.pdf?arnumber=6204027

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of an uncooled mid-infrared Schottky photodetector based on a 2D Au/PtSi/p-Si nanohole array at a higher light modulation frequency;Applied Optics;2024-03-04

2. Novel digital terahertz device for three-state logic gate and phase coding based on graphene and Schottky barrier junctions;Optics and Lasers in Engineering;2024-03

3. The Impact of Annealing Treatment on Ethanol Gas Sensing Performance of SnO₂ Nanoflakes;ECS Journal of Solid State Science and Technology;2023-08-01

4. Superior photosensing performance by Ag nanoparticles textured Al2O3 thin film based device;Journal of Nanoparticle Research;2023-04-24

5. Influence of Annealing Temperature on ZrO₂ Nanoparticles for Improved Photodetection;IEEE Electron Device Letters;2022-06

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