Characterization of an uncooled mid-infrared Schottky photodetector based on a 2D Au/PtSi/p-Si nanohole array at a higher light modulation frequency

Abstract

In this study, an uncooled 2D nanohole array PtSi/p-Si Schottky mid-infrared (MIR) photodetector, which is essential for on-chip Si-based low-barrier MIR detectors, is presented. Room temperature operation introduces susceptibility to thermal noise and can impact stability. Through modulation frequency and reverse bias optimization, the stability improved by 7 times at 170 Hz and −3.5V, respectively. The effective light detection and stability were confirmed through ON/OFF response measurements over a longer time. The wavelength-dependent responsivity, measured with a tunable MIR laser, confirmed the responsiveness of the device in the MIR region of 2.5 µm to 4.0 µm, with a maximum specific detectivity (D*) of 2.0×103cmHz1/2W−1 at 3.0 µm; this result shows its potential applicability for noninvasive human lipid monitoring. Overall, this study focuses on the crucial role of signal analysis optimization in enhancing the performance of MIR photodetectors at room temperature.