Temperature Dependence on Fin-FET Electrical Parameters for Al2O3 and HfO2 Dielectric Materials: A Comparative Study-Reference-Cited by-同舟云学术

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Temperature Dependence on Fin-FET Electrical Parameters for Al₂O₃ and HfO₂ Dielectric Materials: A Comparative Study

Published:2022-02-26 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE VLSI Device Circuit and System (VLSI DCS)
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Author:

Singh Salini¹,Roy Bhaskar²,Billaha Md. Aref³,Dutta Ritam⁴,Choudhary Santosh K.⁵

Affiliation:

1. Intel Corporation,Bengaluru,India

2. Brainware University,Dept. of Electronics & Communication Engineering,Kolkata,700125

3. Jalpaiguri Polytechnic Institute,Dept. of Electronics & Telecommunication Engineering,Jalpaiguri,West Bengal,735121

4. Siksha ‘O’ Anusandhan University,Center of Intelligent Systems and Robotics-ITER,Odisha,751030

5. VNR Vignana Jyothi Institute of Engineering and Technology,Dept. of ECE,Hyderabad,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9811418/9811430/09811493.pdf?arnumber=9811493

Reference16 articles.

1. A temperature characterization of (Si-FinFET) based on channel oxide thickness

2. CMOS design near the limit of scaling

3. Performance Study of Ambipolar Conduction Suppression for Dual-Gate Tunnel Field-Effect Transistors

4. Influence of Gate and Channel Engineering on Multigate Tunnel FETs: A Review

5. Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates

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