Performance Study of Ambipolar Conduction Suppression for Dual-Gate Tunnel Field-Effect Transistors
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Publisher
Springer Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-16-2911-2_4
Reference20 articles.
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3. Anghel C, Gupta A, Amara A, Vladimirescu A (2011) 30-nm tunnel FET with improved performance and reduced ambipolar current. IEEE Trans Electron Devices 58(6):1649–1654
4. Narang R, Saxena M, Gupta RS, Gupta M (2012) Assessment of ambipolar behavior of a tunnel FET and influence of structural modifications. J Semicond Technol Sci 12(4)
5. Abdi DB, Kumar MJ (2014) Controlling ambipolar current in tunneling FETs using overlapping gate-on-drain. IEEE J Electron Devices Soc 2(6):187–190
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