Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current-Reference-Cited by-同舟云学术

Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

Published:2014-12 Issue:12 Volume:61 Page:4047-4055
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shayesteh Maryam,Connell Dan O',Gity Farzan,Murphy-Armando Philip,Yu Ran,Huet Karim,Toque-Tresonne Ines,Cristiano Fuccio,Boninelli Simona,Henrichsen Henrik Hartmann,Nielsen Peter Folmer,Petersen Dirch Hjorth,Duffy Ray

Funder

Science Foundation Ireland

Higher Education Authority Programme for Research in Third-Level Institutions

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6965486/06945879.pdf?arnumber=6945879

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