Plan View and Cross-Sectional View EBIC Measurements: Effect of e-Beam Injection Conditions on Extracted Minority Carrier Transport Properties
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/6837542/06834776.pdf?arnumber=6834776
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron beam induced current microscopy of silicon p–n junctions in a scanning transmission electron microscope;Journal of Applied Physics;2021-04
2. Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique;IEEE Transactions on Electron Devices;2021-01
3. From EBIC images to qualitative minority carrier diffusion length maps;Ultramicroscopy;2019-02
4. Modified electron beam induced current technique for in(Ga)As/InAsSb superlattice infrared detectors;Journal of Applied Physics;2017-08-21
5. An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices;IEEE Transactions on Electron Devices;2016-11
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