3-D Stacking of SiC Integrated Circuit Chips With Gold Wire Bonded Interconnects for Long-Duration High-Temperature Applications
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Idaho, Moscow, ID, USA
Funder
National Aeronautics and Space Administration Established Program to Stimulate Competitive Research
Micron Technology Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5503870/9953743/09905621.pdf?arnumber=9905621
Reference15 articles.
1. Wirebonding Based 3-D SiC IC Stacks for High Temperature Applications
2. Effect of high temperature annealing on the electrical performance of titanium/platinum thin films
3. The Effect of Annealing on the Electrical Resistivity of Thin Gold Films
4. Gold-platinum alloys;darling;Platinum Met Rev,1962
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