MBE growth of high quality AlGaN/GaN HEMTs on resistive Si[111] substrate with RF small signal and power performances-Reference-Cited by-同舟云学术

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MBE growth of high quality AlGaN/GaN HEMTs on resistive Si[111] substrate with RF small signal and power performances

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Container-title:International Conference on Molecular Bean Epitaxy
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Author:

Cordier Y.,Semond F.,Lorenzini P.,Grandjean N.,Natali F.,Damilano B.,Massies J.,Hoel V.,Minko A.,Vellas N.,Gaquiere C.,DeJaeger J.C.,Dessertene B.,Cassette S.,Surrugue M.,Adam D.,Grattepain J.-C.,Delage S.L.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8051/22251/01037778.pdf?arnumber=1037778

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN HEMT for High-performance Applications: A Revolutionary Technology;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2023-09-14

2. Implementation of slow and smooth etching of GaN by inductively coupled plasma;Journal of Semiconductors;2018-11

3. Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications;Materials Science Forum;2014-10

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