Electron bombarded semiconductor devices-Reference-Cited by-同舟云学术

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Electron bombarded semiconductor devices

Published:1974 Issue:8 Volume:62 Page:1119-1158
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Silzars A.,Bates D.J.,Ballonoff A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31183/01451503.pdf?arnumber=1451503

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Solid State Electron Detector for the EB60 Electron Beam Lithography System;Japanese Journal of Applied Physics;1987-09-20

2. Recent Trends in Photomultipliers for Nuclear Physics;Advances in Electronics and Electron Physics Volume 60;1983

3. Electron‐beam induced current in GaAs field‐effect transistors;Applied Physics Letters;1982-07-15

4. Physical Limitations and Exploratory Devices;Semiconductor Devices for Power Conditioning;1982

5. Electron beam modulation of GaAs metal‐semiconductor field‐effect transistors;Applied Physics Letters;1980-11-15

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