Electron beam modulation of GaAs metal‐semiconductor field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91769
Reference8 articles.
1. Electron bombarded semiconductor devices
2. Current-gain characteristics of Schottky-barrier and p-n junction electron-beam semiconductor diodes
3. Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials
4. Analysis of N-Type GaAs with Electron-Beam-Excited Radiative Recombination
5. Electron‐beam penetration in GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electron beam induced current (EBIC) investigations of GaAs-MESFET;Microelectronic Engineering;1992-03
2. Chapter 5 Phototransistors for Lightwave Communications;Semiconductors and Semimetals;1985
3. Electron‐beam induced current in GaAs field‐effect transistors;Applied Physics Letters;1982-07-15
4. Investigation of GaAs field‐effect transistor interfaces using pulsed electron beam excitation;Journal of Vacuum Science and Technology;1982-07
5. High speed response of a GaAs metal‐semiconductor field‐effect transistor to electron‐beam excitation;Journal of Applied Physics;1982-05
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