Understanding RowHammer Under Reduced Wordline Voltage: An Experimental Study Using Real DRAM Devices-Reference-Cited by-同舟云学术

Understanding RowHammer Under Reduced Wordline Voltage: An Experimental Study Using Real DRAM Devices

Published:2022-06 Issue: Volume: Page:
ISSN:
Container-title:2022 52nd Annual IEEE/IFIP International Conference on Dependable Systems and Networks (DSN)
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Author:

Yaglikci A. Giray¹,Luo Haocong¹,De Oliviera Geraldo F.¹,Olgun Ataberk¹,Patel Minesh¹,Park Jisung¹,Hassan Hasan¹,Kim Jeremie S.¹,Orosa Lois¹,Mutlu Onur¹

Affiliation:

1. ETH Zürich

Funder

Microsoft

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9833551/9833474/09833679.pdf?arnumber=9833679

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