Read Disturbance in High Bandwidth Memory: A Detailed Experimental Study on HBM2 DRAM Chips-Reference-Cited by-同舟云学术

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Read Disturbance in High Bandwidth Memory: A Detailed Experimental Study on HBM2 DRAM Chips

Published:2024-06-24 Issue: Volume: Page:75-89
ISSN:
Container-title:2024 54th Annual IEEE/IFIP International Conference on Dependable Systems and Networks (DSN)
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Author:

Olgun Ataberk¹,Osseiran Majd¹,Yağlıkçı A. Giray¹,Tuğrul Yahya Can¹,Luo Haocong¹,Rhyner Steve¹,Salami Behzad²,Luna Juan Gomez¹,Mutlu Onur¹

Affiliation:

1. ETH Zürich

2. BSC

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10646626/10646630/10646895.pdf?arnumber=10646895

Reference199 articles.

1. Flipping bits in memory without accessing them

2. RowHammer: A Retrospective;Mutlu;IEEE TCAD Special Issue on Top Picks in Hardware and Embedded Security,2019

3. Fundamentally Understanding and Solving RowHammer

4. RowPress: Amplifying Read Disturbance in Modern DRAM Chips

5. Exploiting Hardware Vulnerabilities to Attack Embedded System Devices: a Survey of Potent Microarchitectural Attacks

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Experimental Characterization of Combined RowHammer and RowPress Read Disturbance in Modern DRAM Chips;2024 54th Annual IEEE/IFIP International Conference on Dependable Systems and Networks - Supplemental Volume (DSN-S);2024-06-24

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