Patterning of N:Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> Films and the Characterization of Etch Induced Modification for Non-Volatile Phase Change Memory Applications-Reference-Cited by-同舟云学术

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Patterning of N:Ge2Sb2Te5 Films and the Characterization of Etch Induced Modification for Non-Volatile Phase Change Memory Applications

Published:2008-04 Issue: Volume: Page:
ISSN:1930-885X
Container-title:2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
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Author:

Joseph E. A.,Happ T. D.,Chen S.-H.,Raoux S.,Chen C.-F.,Breitwisch M.,Schrott A. G.,Zaidi S.,Dasaka R.,Yee B.,Zhu Y.,Bergmann R.,Lung H.-L.,Lam C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4522565/4530767/04530837.pdf?arnumber=4530837

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Density Nanopatterning of SiGeAsTe Chalcogenide as Ovonic Threshold Switch Selectors for Memory Applications;ACS Applied Nano Materials;2023-06-03

2. The effect of slurry pH on the chemical mechanical planarization of a carbon-doped Ge₂Sb₂Te₅ phase change material;Journal of Materials Chemistry C;2022

3. 3D cross-point phase-change memory for storage-class memory;Journal of Physics D: Applied Physics;2019-09-09

4. Formation of recessed hole by NF3/O2 etching for phase change memory;SPIE Proceedings;2016-10-12

5. The improvement of nitrogen doped Ge 2 Sb 2 Te 5 on the phase change memory resistance distributions;Solid-State Electronics;2016-02

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