Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si-Reference-Cited by-同舟云学术

Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

Published:2017-01 Issue:1 Volume:64 Page:226-232
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Zhang En Xia^ORCID,Fleetwood Daniel M.,Hachtel Jordan A.,Liang Chundong,Reed Robert A.,Alles Michael L.,Schrimpf Ronald D.,Linten Dimitri,Mitard Jerome,Chisholm Matthew F.,Pantelides Sokrates T.

Funder

AFRL and AFOSR through the Hi-REV program

Defense Threat Reduction Agency through its Basic Research program

Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://ieeexplore.ieee.org/ielaam/23/7869239/7765121-aam.pdf

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2. Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs;IEEE Transactions on Device and Materials Reliability;2023-03

3. Influence of total ionizing dose on LWM Bulk and SOI p-FinFET;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

4. Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices;Applied Physics Letters;2022-08-15

5. Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs;IEEE Transactions on Nuclear Science;2022-03