Doping-selective etching of silicon for wafer thinning in the fabrication of backside-illuminated stacked CMOS image sensors-Reference-Cited by-同舟云学术

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Doping-selective etching of silicon for wafer thinning in the fabrication of backside-illuminated stacked CMOS image sensors

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

Venkataraman Nandini¹,Risse Benedikt²,Decierdo Gregorio³,Singh Navab¹,Senthilkumar Darshini¹,Kandasamy Deepthi⁴,Toh Eng Huat⁴,Lim Louis⁴

Affiliation:

1. Institute of Microelectronics Agency for Science, Technology, and Research,Singapore

2. Nexgen Wafer Systems GmbH Emil-von-Behring Strass 23,Villach,Austria

3. Nexgen Wafer Systems Pte. Ltd.,Singapore,569880

4. GlobalFoundries Singapore,Singapore,738406

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195401.pdf?arnumber=10195401

Reference11 articles.

1. Method for Semiconductor Selective Etching and BSI Image Sensor;wang;US Patent Appl # US 2016/0141330 Al,2016

2. An Alternate Approach to Backside Thinning: A Doping Selective Silicon Wet Etch

3. How to prevent a runaway chemical reaction in the isotropic etching of silicon with HF/HNO 3 /CH 3 COOH or HNA solution

4. Tuning of Etching Rate by Implantation: Silicon, Polysilicon and Oxide

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Single and Co-Ion Implantation Induced Backside Etch Stop Structures for 3D Multilayer Stacked Package;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

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