Atomistic simulation analysis of plasma surface activation in wafer-to-wafer oxide fusion bonding-Reference-Cited by-同舟云学术

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Atomistic simulation analysis of plasma surface activation in wafer-to-wafer oxide fusion bonding

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

Kim Hojin¹,Tsai Yu-Hao¹,Hoshino Satohiko¹,Son Ilseok¹,Kaoru Maekawa¹,Biolsi Peter¹,Arkalgud Sitaram¹

Affiliation:

1. TEL Technology Center, America, LLC,Albany,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195359.pdf?arnumber=10195359

Reference28 articles.

1. A model for spectroscopic ellipsometry analysis of plasma-activated Si surfaces for direct wafer bonding

2. Combined surface activated bonding (SAB) approach for SiO2 direct wafer bonding in vacuum

3. Room Temperature SiC-SiO2Wafer Bonding Enhanced by Using an Intermediate Si Nano Layer

4. Effect of Interfacial SiO2 Thickness for Low Temperature O2 Plasma Activated Wafer Bonding;olbrechts;Microsyst Technol,2006

5. Novel hydrophilic SiO2wafer bonding using combined surface-activated bonding technique

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomistic simulation investigation of various plasma surface activations in SiCN dielectric bonding;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

2. State of the Art of Cu–Cu Hybrid Bonding;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-03

3. Cu-Cu Hybrid Bonding;Flip Chip, Hybrid Bonding, Fan-In, and Fan-Out Technology;2024

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