The Wafer Bonding yield improvement through control of SiCN Film composition and Cu Pad Shape
Author:
Affiliation:
1. SK Hynix Semiconductor Co., Ltd,R&D Center,Icheon,Republic of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9816066/9816372/09816428.pdf?arnumber=9816428
Reference9 articles.
1. Influence of Composition of SiCN Film for Surface Activated Bonding
2. Low temperature direct bonding: An attractive technique for heterostructures build-up
3. Cu/SiO2CMP Process for Wafer Level Cu Bonding
4. Cu CMP Dishing in High Density Cu Pad for Fine Pitch Wafer-to-Wafer (W2W) Hybrid Bonding
5. Effects of O2- and N2-Plasma Treatments on Copper Surface
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