A Study on Memory Stack Process by Hybrid Copper Bonding (HCB) Technology

Author:

Lee Sanghoon1,Jee Youngkun1,Park Sangcheon1,Lee Soohwan1,Hwang Bohee1,Jo Gyeongjae1,Lee Chungsun1,Park Jumyong1,Jang Aeni1,Jung HyunChul1,Kim Ilhwan1,Kang Dongwoo1,Baek Seungduk1,Kim Dae-Woo1,Kang Unbyung1

Affiliation:

1. Test & System Package (TSP) Samsung Electronics Co., Ltd,Chungcheongnam-Do,South Korea,21086

Publisher

IEEE

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Experimental and Numerical Investigation of Cu-Cu Direct Bonding Quality for 3D Integration;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

2. A study on D2W Hybrid Cu bonding Technology for HBM Multi-die Stacking;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

3. A Study on the Surface Activation of Plasma Treatment for Hybrid Bonding Joint Interface;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

4. Research progress of hybrid bonding technology for three-dimensional integration;Microelectronics Reliability;2024-04

5. A Collective Die to Wafer Bonding Approach Based on Surface-Activated Aluminum–Aluminum Thermocompression Bonding;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-03

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