Thermal Compression Cu-Cu bonding using electroless Cu and the evolution of voids within bonding interface
Author:
Affiliation:
1. National Taiwan University,Department of Materials Science and Engineering,Taipei,Taiwan, R. O. C.
Funder
Ministry of Science and Technology
National Taiwan University
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9816066/9816372/09816396.pdf?arnumber=9816396
Reference15 articles.
1. Physical mechanisms of copper-copper wafer bonding
2. Detailed Evolution Mechanism of Interfacial Void Morphology in Diffusion Bonding
3. Effect of Compressive Stress on Evolution and Healing Kinetics of Artificial Voids in Highly (111)-Oriented Cu-Cu Wafer Bonding at 300 °C
4. Observation of interfacial void formation in bonded copper layers
5. Significant enhancement of the strength-to-resistivity ratio by nanotwins in epitaxial Cu films
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