Fabrication and characteristics of SiON/p-Si by non-vacuumed deposition technology
Author:
Affiliation:
1. National Kaohsiung University of Science and Technology,Department of Microelectronics Engineering,Kaohsiung City,Taiwan (R.O.C.)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9774394/9774395/09774459.pdf?arnumber=9774459
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1. A single-frequency approximation for interface-state density determination
2. Surface passivation property of aluminum oxide thin film on silicon substrate by liquid phase deposition
3. Trap-assisted tunneling current of ultrathin InAlN/GaN HEMTs on Si (1 1 1) substrate
4. Structural, Electrical and Dielectric Properties of DC Reactive Magnetron Sputtered ZrO2 Films for Metal-Oxide-Semiconductor Devices
5. Light nitrogen implant for preparing thin-gate oxides
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