Effect of Geometry on the Frequency Limit of GaAs/AlGaAs 2-D Electron Gas (2DEG) Hall Effect Sensors-Reference-Cited by-同舟云学术

Effect of Geometry on the Frequency Limit of GaAs/AlGaAs 2-D Electron Gas (2DEG) Hall Effect Sensors

Published:2023-12 Issue:12 Volume:7 Page:1-4
ISSN:2475-1472
Container-title:IEEE Sensors Letters
language:
Short-container-title:IEEE Sens. Lett.

Author:

Lalwani Anand¹^ORCID,Giparakis Miriam²^ORCID,Arora Kanika³,Maharaj Avidesh¹^ORCID,Levy Akash¹^ORCID,Strasser Gottfried²^ORCID,Andrews Aaron Maxwell²^ORCID,Köck Helmut⁴^ORCID,Senesky Debbie G.¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, CA, USA

2. Institute of Solid State Electronics, TU Wien, Vienna, Austria

3. Department of Aeronautics and Aerospace Engineering, Stanford University, Stanford, CA, USA

4. Infineon Technologies Austria AG, Villach, Austria

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7782634/10312795/10265221.pdf?arnumber=10265221

Reference15 articles.

1. High-Precision Speed and Position Estimation Based on Hall Vector Frequency Tracking for PMSM With Bipolar Hall-Effect Sensors

2. High-precision wideband highly stable current sensing technology;ikeda;Bodo's Power Syst,2016

3. A Broadband, On-Chip Sensor Based on Hall Effect for Current Measurements in Smart Power Circuits

4. Hall-Effect Sensor Design With Physics-Informed Gaussian Process Modeling

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