Tunable Piezoresistive NEMS Pressure Sensor Simulation Under Various Environmental Conditions
Author:
Affiliation:
1. Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi, India
2. School of Engineering, Macquarie University, Sydney, NSW, Australia
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7782634/10180123/10198558.pdf?arnumber=10198558
Reference19 articles.
1. Electro-Thermal Characteristics of Junctionless Nanowire Gate-All-Around Transistors Using Compact Thermal Conductivity Model
2. Thermal Conductivity Model to Analyze the Thermal Implications in Nanowire FETs
3. Minimum detectable strain improvement in junctionless nanowire FET sensors
4. Piezoresistive Sensing Performance of Junctionless Nanowire FET
5. Nanowire transistors without junctions
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