Thermal Characterization of THz Schottky Diodes Using Transient Current Measurements-Reference-Cited by-同舟云学术

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Thermal Characterization of THz Schottky Diodes Using Transient Current Measurements

Published:2014-03 Issue:2 Volume:4 Page:267-276
ISSN:2156-342X
Container-title:IEEE Transactions on Terahertz Science and Technology
language:
Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Khanal Subash,Kiuru Tero,Tang Aik-Yean,Saber Mohammad Arif,Mallat Juha,Stake Jan,Narhi Tapani,Raisanen Antti V.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

Link

http://xplorestaging.ieee.org/ielx7/5503871/6759772/06742627.pdf?arnumber=6742627

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Development of Frequency Multipliers for Terahertz Remote Sensing System;Remote Sensing;2022-05-23

2. Self-Consistent Electro-Thermal Approach for Terahertz Frequency Multiplier Design;Journal of Infrared, Millimeter, and Terahertz Waves;2020-10-16

3. Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon;IEEE Transactions on Electron Devices;2019-01

4. THz Diode Technology: Status, Prospects, and Applications;Proceedings of the IEEE;2017-06

5. Thermal Characterization of Substrate Options for High-Power THz Multipliers Over a Broad Temperature Range;IEEE Transactions on Terahertz Science and Technology;2016-03

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