Strain Compensated InGaAs/AlAs Triple Barrier Resonant Tunneling Structures for THz Applications-Reference-Cited by-同舟云学术

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Strain Compensated InGaAs/AlAs Triple Barrier Resonant Tunneling Structures for THz Applications

Published:2017-11 Issue:6 Volume:7 Page:772-779
ISSN:2156-342X
Container-title:IEEE Transactions on Terahertz Science and Technology
language:
Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Allford Craig P.^ORCID,Buckle Philip D.^ORCID

Funder

Engineering and Physical Sciences Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

Link

http://xplorestaging.ieee.org/ielx7/5503871/8101573/08094268.pdf?arnumber=8094268

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and Theoretical Investigation of Collector Spacer and Doping Profile on Triple‐Barrier Resonant Tunneling Diodes;physica status solidi (a);2023-11-03

2. Very High-Power High-Frequency Resonant Tunnelling Diode Oscillators;2022 15th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT);2022-10-17

3. Accurate Quantum Transport Modeling of High-Speed In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunneling Diodes;IEEE Transactions on Electron Devices;2022-08

4. In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band;2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS);2022-07-04

5. 1080P HD Video Transmission using RTD Transmitter;2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT);2021-09-13

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