Increase of Self-Oscillation and Transformation Frequencies in THz Diodes-Reference-Cited by-同舟云学术

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Increase of Self-Oscillation and Transformation Frequencies in THz Diodes

Published:2018-03 Issue:2 Volume:8 Page:231-236
ISSN:2156-342X
Container-title:IEEE Transactions on Terahertz Science and Technology
language:
Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Pavelyev Dmitrii G.^ORCID,Vasilev Alexey P.,Kozlov Vladimir A.^ORCID,Obolenskaya Elizabeth S.^ORCID,Obolensky Sergey V.,Ustinov Victor M.

Funder

RFFI

Ministry of Education and Science of the Russian Federation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

Link

http://xplorestaging.ieee.org/ielx7/5503871/8305668/08260955.pdf?arnumber=8260955

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1. Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter;Микроэлектроника;2024-07-17

2. Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter;Russian Microelectronics;2024-02

3. Coexistence of Bloch and Parametric Mechanisms of High-Frequency Gain in Doped Superlattices;Nanomaterials;2023-07-01

4. Calculating Current–Voltage Characteristics with Negative Differential Conductivity Sections of Superlattices Based on a GaAs/AlAs Compound with Different Numbers of Periods;Bulletin of the Russian Academy of Sciences: Physics;2023-06

5. Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range;Semiconductors;2020-10

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