Affiliation:
1. Lobachevsky State University of Nizhny Novgorod (NNSU)
Abstract
A set of transfer and output current-voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region has been calculated. It is shown that the presence of a superlattice in the tr ansistor structure leads to the fo rmation of a negative differential conductivity region, which makes it possible to implement not only amplification, but also the generation and multiplication of high-frequency oscillations.
Publisher
The Russian Academy of Sciences