Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125113
Reference13 articles.
1. Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors
2. Evaluation of base transit time in ultra-thin carbon-doped base InP/InGaAs heterojunction bipolar transistors
3. High-speed InGaP/GaAs HBTs using a simple collector undercut technique to reduce base-collector capacitance
4. A heterojunction bipolar transistor with separate carrier injection and confinement
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