Performance Optimization of ZnO QDs/F8BT Heterojunction-Based UV–Visible Photodetectors Using MoO x Hole Transport Layer
Author:
Affiliation:
1. Department of Electronics Engineering, IIT (BHU) Varanasi, Varanasi, India
Funder
Science and Engineering Research Board, Department of Science and Technology, Government of India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10194493/10163769.pdf?arnumber=10163769
Reference38 articles.
1. Pentacene-Zinc Oxide Vertical Diode with Compatible Grains and 15-MHz Rectification
2. Space-limited domain annealing of CuI thin films for highly responsive ZnO nanorods based ultraviolet photodetectors
3. Optoelectronic Properties of ZnO Nanoparticle/Pentacene Heterojunction Photodiode
4. A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction
5. Effect of Diffusion on Photo-Induced Excited-State Energy Transfer between Fluorescent Semiconducting Molecules: Tris-(8-hydroxyquinoline) Aluminum and 6,13-Bis (Triisopropylsilylethynyl) Pentacene
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