Engineering Hf0.5Zr0.5O2 Ferroelectric Tunnel Junctions With Amorphous WO x Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage-Reference-Cited by-同舟云学术

Engineering Hf_0.5Zr_0.5O₂ Ferroelectric Tunnel Junctions With Amorphous WO_x Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage

Published:2023-10 Issue:10 Volume:70 Page:5022-5027
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhao Zefu¹^ORCID,Chen Yu-Rui¹^ORCID,Chen Yun-Wen¹,Wang Jer-Fu¹^ORCID,Xing Yifan¹^ORCID,Ji Wang²,Chen Guan-Hua²^ORCID,Lee Jia-Yang³,Dobhal Rachit³,Liu C. W.⁴^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, Taipei, Taiwan

2. Graduate Institute of Photonics and Optoelectronics, Taipei, Taiwan

3. Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

4. Department of Electrical Engineering, the Graduate Institute of Electronics Engineering, the Graduate Institute of Photonics and Optoelectronics, and the Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

Funder

National Science and Technology Council, Taiwan

Ministry of Education, Taiwan

Center for the Semiconductor Technology Research from the Featured Areas Research Center Program within the Framework of the Higher Education Sprout

Ministry of Education (MOE) in Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10261402/10243553.pdf?arnumber=10243553

Reference39 articles.