Liquid Phase Exfoliated 2-D MoS<sub>2</sub>-Based Broadband Heterojunction Low-Powered Photosensor-Reference-Cited by-同舟云学术

Liquid Phase Exfoliated 2-D MoS₂-Based Broadband Heterojunction Low-Powered Photosensor

Published:2023-03 Issue:3 Volume:70 Page:1149-1155
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumar Surendra¹^ORCID,Gautam Vidushi²,Singh Abhishek Kumar³^ORCID,Maurya Gyanendra Kumar²,Singh Sanjai⁴,Kumar Pramod²^ORCID

Affiliation:

1. Department of Electronics and Communications and the Spintronic and Magnetic Materials Laboratory, Department of Applied Sciences, Indian Institute of Information Technology-Allahabad, Prayagraj, India

2. Department of Applied Sciences, Spintronic and Magnetic Materials Laboratory, Indian Institute of Information Technology-Allahabad, Prayagraj, India

3. Electrical and Electronics Department, Rajiv Gandhi Institute of Petroleum Technology, Amethi, India

4. Department of Electronics and Communications, Indian Institute of Information Technology-Allahabad, Prayagraj, India

Funder

Science and Engineering Research Board (SERB), Government of India

Council of Science and Technology, Uttar Pradesh (CSTUP) of India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10035483.pdf?arnumber=10035483

Reference35 articles.

1. A monolayer MoS 2 p-n homogenous photodiode with enhanced photoresponse by piezo-phototronic effect

2. Influence of MoS2-silicon interface states on spectral photoresponse characteristics;desai;Phys Status Solidi (a),2019

3. Single-layer MoS2 phototransistors;zongyou;ACS Nano,2012

4. Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process

5. Atomically thin p–n junctions based on two-dimensional materials

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