Investigation of Delay Jitter of Avalanche GaAs PCSS for Triggering High-Voltage Gas Switch
Author:
Affiliation:
1. Department of Microelectronics, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, China
2. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an, China
Funder
National Natural Science Foundation of China
Foundation of State Key Laboratory of Intense Pulsed Radiation the Simulation and Effect
Foundation of State Key Laboratory of Pulsed Power Laser Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10106527/10097510.pdf?arnumber=10097510
Reference27 articles.
1. Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch
2. The Jitter Time of GaAs Photoconductive Switch Triggered by 532- and 1064-nm Laser Pulse
3. Investigation of electric field threshold of GaAs photoconductive semiconductor switch triggered by 1.6 μJ laser diode
4. Influence of the incident laser pulse energy on jitter time of GaAs photoconductive semiconductor switches
5. A 80 kV gas switch triggered by a 17 μJ fiber-optic laser
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Controllable Current Diversion of GaAs PCSS Array Based on Inductance Modulation;IEEE Electron Device Letters;2024-04
2. Switching jitter of avalanche gallium arsenide photoconductive semiconductor switch influenced by multiple avalanche domains;Review of Scientific Instruments;2024-01-01
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