Influence of the incident laser pulse energy on jitter time of GaAs photoconductive semiconductor switches-Reference-Cited by-同舟云学术

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Influence of the incident laser pulse energy on jitter time of GaAs photoconductive semiconductor switches

Published:2013-10-21 Issue:21 Volume:38 Page:4339
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Shi Wei,Gui Huai-meng,Zhang Lin,Li Meng-xia,Ma Cheng,Wang Lu-yi,Jiang Huan

Funder

China's Ministry of Education doctoral program funds

National Natural Science Foundation of China (NSFC)

Project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

Shaanxi International Cooperation project

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference11 articles.

1. Photoconductive semiconductor switches

2. 30kV and 3kA semi-insulating GaAs photoconductive semiconductor switch

3. Photoconductive semiconductor switch experiments for pulsed power applications

4. High-Voltage Rectifier Diodes Used as Photoconductive Device for Microwave Pulse Generation

5. Characterization of a Linear Photoconductive Switch Used in Nanosecond Pulsed Electric Field Generator

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1. Switching jitter of avalanche gallium arsenide photoconductive semiconductor switch influenced by multiple avalanche domains;Review of Scientific Instruments;2024-01-01

2. Investigation of Delay Jitter of Avalanche GaAs PCSS for Triggering High-Voltage Gas Switch;IEEE Transactions on Electron Devices;2023-05

3. Effect of Transition Mechanism of Photon-Induced Carriers on Time Jitter of GaAs Photoconductive Semiconductor Switches;IEEE Transactions on Electron Devices;2021-12

4. Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch;Photonics;2021-09-10

5. Measurement and Analysis for Time Jitter of Reversely Switched Dynistor;IEEE Transactions on Electron Devices;2020-11

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